fig13

Figure 13. (A) Schematic diagrams of the process flow for preparing CsPbI₂Br films using RTSA and direct thermal annealing. This figure is quoted with permission from Ref.^[220], Copyright © 2018 Wiley-VCH; (B) Schematic diagram and J-V curve of flexible CsPbI₂Br IPSC. Reprinted from Ref.^[221] under the CC BY 4.0 license; (C) Schematic diagram of the interaction between t-BCA and perovskite, as well as ball-and-stick models of AZO and ZnO. The J-V curves of the flexible IPSC before and after 1,000 bending cycles (bending radius of 3 millimeters). This figure is quoted with permission from Ref.^[223], Copyright © 2020 The Royal Society of Chemistry; (D) Schematic diagram of the preparation principles of original, controlled, and mixed CsPbI₃ quantum dot films. Reprinted from Ref.^[224] under the CC BY 4.0 license. AZO: Aluminum-doped zinc oxide; BCA: cyanoacetate; DMSO: dimethyl sulfoxide; FF: fill factor; IPSC: inorganic perovskite solar cell; MeOAc: methyl acetate; PCBM: phenyl-C61-butyric acid methyl ester; PCE: power conversion efficiency; PET: polyethylene terephthalate; QD: quantum dot; RT: room temperature; RTSA: room-temperature solvent annealing; t-BCA: tert-butyl cyanoacetate.