fig3

Figure 3. (A) Schematic diagram of the buckled MoS₂ FET on a stretchable PDMS substrate; (B) Transfer curves, mobility, and SS value of the device under biaxial strain with different strains, V_ds = 3 V; (C) Optical potentiation (1 Hz, 0.5 s) and electric depression (V_g = 12 V, 4.5 s) of the stretchable MoS₂ device under 0%, 3.2%, and 6.5% strain and the simulation results of image recognition accuracy under different strains. Reprinted with permission from Ref.^[16]. Copyright 2022, John Wiley and Sons. FET: field-effect transistor; PDMS: polydimethylsiloxane.