fig5
Figure 5. (A) P-E hysteresis at 1 kHz of 9-nm-thick HZO-based metal-insulator-metal capacitors. (B) Evolution of Pr, εr and M-phase fraction in the HfO2-ZrO2 solid solution with increasing ZrO2 content (mol.%)[74]. (C) Contour plot of Pr as a function of dopant radius and concentration[45]. HZO: Hf0.5Zr0.5O2; Pr: remanent polarization.
