fig11
Figure 11. (A) An intensity contour map of GIXRD patterns of Si-doped HfO2 films from 110 to 410 K. GIXRD patterns of Si-doped HfO2 films measured at (B) 410, (C) 350, (D) 275, (E) 200, (F) 125 and (G) 110 K. P-E curves of Si-doped HfO2 films measured at (H) 400, (I) 350, (J) 275, (K) 200, (L) 125 and (M) 80 K[122]. GIXRD: Grazing incidence X-ray diffraction
