fig5
Figure 5. (A) Schematic diagram of n-i-p perovskite device structure. The Fermi energy Ef, the highest occupied orbital energy ECBM, the lowest unoccupied orbital energy EVBM and bandgap Eg value of the PMs@MAPbI3. Comparison of (B) J-V curves and (C) quantum efficiency of devices with different absorption layers.
